[14p-503-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors

[14p-503-2] Radiative and non-radiative recombination processes in Al-rich AlGaN quantum wells

〇Yoichi Kawakami¹, Shuhei Ichikawa¹, Mitsuru Funato¹ (1.Kyoto Univ.)

Keywords:AlGaN, radiative recombination, non-radiative recombination

Al-rich AlGaN quantum wells are promising for deep ultraviolet emitters. In this symposium, how dislocations and defects act as non-radiative recombination centers will be reported in order to find the key for higher internal quantum efficiencies, by detailed studies of critical layer thicknesses assessed by time-resolved photoluminescence (TRPL) spectroscopy, as well as by temperature dependences of cathode-luminescence (CL) mappings.