[14p-503-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors

[14p-503-6] Expectation of polarized light emitters using m-plane AlInN epitaxial nanostructures

〇Shigefusa Chichibu¹, Kazunobu Kojima¹, Akira Uedono², Yoshitaka Sato³ (1.IMRAM, Tohoku Univ., 2.Univ. of Tsukuba, 3.Futaba Corporation)

Keywords:AlInN, Time-resolved Photoluminescence

We are going to demonstrate planar vacuum-fluorescent-display (VFD) devices that emit linearly polarized DUV, blue, and green lights using nonpolar m-plane Al_1-xIn_xN epitaxial nanostructures. Amazingly, the materials are revealed to contain extremely high-concentration of nonradiative recombination centers (NRCs) consisting of Al vacancies (V_Al). As the average distance between such NRCs in three-dimensional space is revealed to be shorter than 4.6 nm, excited carriers have no chance to emit the light in a common sense. However, the epitaxial nanostructures emitted linearly polarized lights. Such defect-resistant radiative performance suggests supernormal characteristics of electron-hole pairs in Al_1-xIn_xN materials, and this makes AlInN material system attractive both in application and in the viewpoint of solid-state physics. We predict that the output power of VFDs will be drastically increased when slight decrease in the V_Al concentration is accomplished by careful tuning of the alloy film growth conditions.