The 64th JSAP Spring Meeting, 2017

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Oral presentation

15 Crystal Engineering » 15.1 Bulk crystal growth

[14p-B5-1~11] 15.1 Bulk crystal growth

Tue. Mar 14, 2017 1:45 PM - 5:45 PM B5 (B5)

Yuui Yokota(Tohoku Univ.)

4:00 PM - 4:15 PM

[14p-B5-5] Numerical investigation for the melt flow during SiC growth by using an induction heating TSSG method

Takuya Yamamoto1, 〇Yasunori Okano1, Toru Ujihara2 (1.Osaka Univ., 2.Nagoya Univ.)

Keywords:Numerical study, SiC, TSSG

Numerical investigation has been performed to underadtand the transport phenomena during SiC bulk crystal growth by using an induction heating Top Seeded Solution Growth (TSSG) method.