[14p-B5-1~11] 15.1 Bulk crystal growth

[14p-B5-8] High Purity SiGe Crystal Growth by the TLZ Method

〇Kyoichi Kinoshita^1,2, Yasutomo Arai³, Tatsuro Maeda⁴, Yasunori Sato⁵, Hidehiko Yoda⁶ (1.JSF, 2.Meiji Univ., 3.JAXA, 4.AIST], 5.TDY Co. Ltd., 6.Utsunomiya Univ.)

Keywords:SiGe, crystal growth, transittance

Traveling Liquidus Zone (TLZ) method enables us to grow compositionally uniform bulk mixed crystals. We grew SiGe bulk single crystals using high purity carbon crucible instead of boron nitride and quartz crucibles by the TLZ method. Transmittance and other properties will be reported.