[14p-B6-1~15] 13.10 Compound solar cells

△ [14p-B6-14] Epitaxial Lift-Off of III-V-N Photovoltaics Fabricated on Si by Heteroepitaxial Growth

〇Keisuke Yamane¹, Kento Sato¹, Hiroto Sekiguchi¹, Hiroshi Okada², Akihiro Wakahara¹ (1.Toyohashi Univ., 2.EIIRIS)

Keywords:III-V-N alloys, epitaxial lift-off, heteroepitaxy

III-V-N alloys can be grown on Si with defect free conditions and they have wide tunable-bandgap range. We have successfully grown the GaAsPN p-i-n junctions with lattice matching conditions. As for the next step, transferring the photovoltaic structure on Si substrate to the foreign wafer will pave the way for new application such as flexible cells or large area multi-junciton solar cell. This work presents the epitaxial lift off of III-V-N photovoltaics fabricated on Si by heteroepitaxial growth.