[14p-B6-1~15] 13.10 Compound solar cells

[14p-B6-4] Effect of miniband formation on characteristics of InAs/GaAs quantum-dot superlattice solar cells

〇Kazuki Hirao¹, Shigeo Asahi¹, Toshiyuki Kaizu¹, Takashi Kita¹ (1.Kobe Univ.)

Keywords:solar cell, quantum dot, InAs/GaAs

Quantum dot intermediate band solar cells(QD-IBSCs) are attracted due to the high coversion efficiency, however thermal carrier escape from quantum dot etc. prevent from high conversion efficiency. We have supposed that high potential barrier with other materials enables suppression thermal carrier escape. In this work, we fabricated the QD-IBSCs which the quantum level are lowered by the quantum size effect, and we analyzed about the miniband formation in this QD-IBSCs and demonstarated the solar cell characteristics by the miniband formation.