[14p-E204-1~21] 2.1 Radiation physics and Detector fundamentals

[14p-E204-21] Radiation-resistant fundamental researches of the oxide semiconductor

〇(M1)Yutaka Otaka^1,2, Kenji Shimazoe², Akihiro Koyama², Hiroaki Miyoshi³, Takeshi Iimoto², Hiroyuki Takahashi², Kazumasa Inoue¹, Masahiro Fukushi¹ (1.Tokyo Metropolitan Univ., 2.The Univ. of Tokyo, 3.SHARP)

Keywords:Indium Gallium Zinc Oxide, Radiation-resistant

In recent years, FPD has become mainstream as a detector for performing X-ray imaging. A general-purpose FPD uses a-Si as a switching element as a switching element. By using TFT as a switching element and IGZO having low leakage characteristics when off, charge leakage is reduced and imaging with low X-ray dose is expected. Therefore, in this research, we report on the evaluation of resistance by X-ray.