[14p-E205-1~14] 13.7 Nano structures and quantum phenomena

[14p-E205-8] Photoluminescence of In-introduced GaAs Nanowires by using the Material Conversion

〇Marina Nakano¹, Takuya Goda¹, Tetsuo Ikari¹, Kohei Nishioka², Fumitaro Ishikawa², Atsuhiko Fukuyama¹ (1.Univ. of Miyazaki, 2.Ehime Univ.)

Keywords:semiconductor, nanowire, photoluminescence

Material conversion (MC) technique can convert to InAs nanowires (NWs) with heating process from GaAs NWs covered with In droplet. InGaAs NWs sample during MC processing was prepared. We investigated MC effect using photoluminescence technique. As a result, the InGaAs NWs of the high concentration In was formed and it was suggested that the location dependency for In introduction amount occurred.