[14p-E206-1~11] 9.3 Nanoelectronics

▲ [14p-E206-7] Robust Pt-based Nanogap Electrodes for Single-Electron Transistors

〇(D)Yoonyoung Choi¹, Yasuo Azuma¹, Yutaka Majima¹ (1.Tokyo Inst. of Tech.)

Keywords:Single electron transistor, Pt, Narrow Line Width Nanogap Electrodes

Recently, Single Electron Transistor (SET) has attracted much attention because of its novel potential applications owing to its small size, low power consumption, high speed operation and single-electron sensitivity. These SETs have been fabricated widely by using the critical dimensional gold nanogap electrodes with few tens of nanometer size[1, 2]. However, SETs using gold nanogap electrodes have some problems because gold electrodes can contaminate Si wafers and be easily peeled off in fabrication process. Here we introduce platinum as a robust nanogap electrodes material, which is expected to maintain the shape of the nanogap electrodes during the fabrication processes compared to gold nanogap electrodes. The platinum nanogap electrodes have been prepared by electron beam lithography and have a narrow electrode width of under 14 nm and a small gap separation of 12 nm. According to our annealing durability test, these platinum nanogap electrodes have shown the superior stability characteristics to gold nanogap electrodes as shown in Figure 1. By using these robust platinum nanogap electrodes, the more stable operation of SET could be expected.