[14p-F201-1~14] 15.7 Crystal evaluation, impurities and crystal defects

[14p-F201-3] Bulk lifetime of free carriers evaluated by parallel dual laser-beam technique: Evaluation of surface-state passivation by thermal oxide-film formation

〇Hiroshi Kaneta¹, Hideaki Yonezawa², Omura Ichirou¹ (1.Kyushu Inst. Tech., 2.Dpt. Ele. Eng. Kyushu Inst. Tech.)

Keywords:silicon, carrier lifetime, surface recombination

By using our new technique for evaluating the carrier lifetime of the silicon wafer, which we have published in the previous JSAP meetings, we evaluate here the effect of surface recombination by comparing the two wafers with and without the thermal oxide film.