[14p-F206-1~13] 22.1 Joint Session M

[14p-F206-1] In-plane thermal conductivity of a free-standing thin film

〇Koji Miyazaki¹, Kou Kuriyama¹, Tomohide Yabuki¹, Laurent Tranchnat¹ (1.Kyutech)

Keywords:Thermal conductivity, Thin film, 3 omega method

We measured the in-plane thermal conductivity of a bismuth telluride film by 3 omega method. We made a free-standing silicon nitride film with 4 micro meter thickness by using standard MEMS processes. In-plane thermal conductivity of the free-standing silicon nitride film was measured to be 4.8 W(m·K) by 3 omega method for a free-standing film. We deposited a p-type bismuth telluride film on the backside of the free-standing silicon nitride film. Thickness of the bismuth telluride was 1.2 micro meter. Thermal conductivity of the multi-layered free-standing thin film with silicon nitride and bismuth telluride was measured by using 3 omega method. The in-plane thermal conductivity of the bismuth telluride thin film was calculated from the measured result by using an empirical equation for multi-layered film with silicon nitride. The in-plane thermal conductivity of the bismuth telluride was 2 W/(m·K), and the result is twice higher than the reported cross-plane thermal conductivity.