[14p-F206-1~13] 22.1 合同セッションM 「フォノンエンジニアリング」

▲ [14p-F206-8] Short Channel Effect of Si Nanowire Thermoelectric Generator

〇(P)張 慧¹、徐 泰宇¹、麻田 修平¹、橋本 修一郎¹、姫田 悠矢¹、大場 俊輔¹、大和 亮¹、渡邉 孝信¹ (1.早稲田大学)

キーワード：nanowire thermoelectric generator, short channel

Si nanowire (SiNW), which has 100-fold reduction in thermal conductivity of bulk-Si and the similar electrical conductivity and Seebeck coefficient as the bulk-Si, has become the most promising candidate for application of thermoelectric generator (TEG) in microscale on-chip energy harvesting. Many efforts have been dedicated to improve SiNW-TEG performance, such as decreasing SiNW width for reducing the thermal conductivity and enhancing the Seebeck coefficient, changing impurity doping concentration to enhance the electrical conductivity, and innovation of new structure in planar or vertical geometries. As the dimension of SiNW-TEG decreases, especially scales down to micrometer level, the influence of channel length on thermoelectric power of TEG is crucial, but has not yet been reported. In our prior work, we proposed a new planar SiNW-TEG and obtained a maximum power output of 1 pW under temperature difference of 0.8 K under short channel of 8 μm in experiment. And we demonstrated that the thermoelectric power can be enhanced by shortening the TEG channel. In this work, we systematically studied the dependence of thermoelectric power on channel length by simulation and demonstrated the short channel effect of SiNW-TEG, which was in agreement with the experimental results.