[14p-F206-1~13] 22.1 Joint Session M

[14p-F206-9] Design of poly-Si thermoelectric device by nano structuring

〇Ryoto Yanagisawa¹, Peter Zimmermann¹, Naohito Tsujii², Oliver Paul³, Takao Mori², Masahiro Nomura^1,4,5 (1.IIS Univ. of Tokyo, 2.NIMS, 3.IMTEK Univ. of Freiburg, 4.NanoQuine Univ. of Tokyo, 5.JST PRESTO)

Keywords:Thermoelectrics, Phononic Crystal, Energy Harvester

We investigate the performance of silicon thermoelectric device with phononic crystal nano structures. Since it is showed that nano-structuring silicon thin film can improve the thermoelectric figure of merit by more than a factor two, Si thermoelectric energy harvesters attract a lot of attention. In this work, we simulated thin film based Si thermoelectric devices by using a finite element method. We investigated the optimal thickness and length of TE elements, and we found that PnC patterning can improve the TE device performance and also allow for a higher density of TE pairs, leading to an increase in output power and mechanical stabillity sufficient for energy harvesting applications.