[14p-P1-1~25] 8 Plasma Electronics（Poster）

△ [14p-P1-3] Development of Radical Source around Wafer Edge

〇Tetsuo Kawanabe¹, Tsutomu Tetsuka¹, Takumi Tandou¹, Masaru Kurihara¹ (1.Hitachi R&D Group)

Keywords:Etching, Plasma

To improve productivity of semiconductor manufacturing, processing uniformity within a wafer is essential. Especially, uniformity at periphery of the wafer is important to increase semiconductor chip yield. A radical source around the wafer edge for plasma etching reactor is developed to realize processing control knob at the wafer edge. The discharge characteristic and the etching characteristic will be reported.