[14p-P10-1~98] 10 Spintronics and Magnetics（Poster）

[14p-P10-28] Preparation of p-SAF-type perpendicular magnetic tunnel junctions with Iridium spacer layer and their spin-transfer-torque switching properties

〇Atsushi Sugihara¹, Kay Yakushiji¹, Akio Fukushima¹, Shinji Yuasa¹ (1.AIST)

Keywords:TMR, p-SAF, STT-MRAM