[14p-P10-1~98] 10 Spintronics and Magnetics（Poster）

▲ [14p-P10-37] Development of a barrier material with a low barrier height for magnetic tunnel junctions: MgGa₂O₄ spine oxide

〇Hiroaki Sukegawa¹, Yushi Kato², Mohamed Belmoubarik¹, P.-H. Cheng^1,3, Tadaomi Daibou², Naoharu Shimomura², Yuuzo Kamiguchi², Junichi Ito², Hiroaki Yoda², Tadakatsu Ohkubo¹, Seiji Mitani^1,3, Kazuhiro Hono^1,3 (1.NIMS, 2.Toshiba, 3.Univ. Tsukuba)

Keywords:Magnetic tunnel junction, Spinel

A magnetic tunnel junction (MTJ) with a low resistance area product (RA) is required for memory applications such as a large capacity MRAM. Introduction of a tunnel barrier material having a low band gap is expected to be effective for reducing an RA of MTJs. In this study, we developed an epitaxial MTJs with a "MgGa₂O₄ spinel oxide" having a low band gap as a barrier layer. In addition to achieving a relatively high tunnel magnetoresistance ratio exceeding 120% at room temperature, we succeeded in reducing an RA to 1/50 compared with the conventional MgAl₂O₄ barrier .