[14p-P10-1~98] 10 スピントロニクス・マグネティクス（ポスター）

▲ [14p-P10-37] Development of a barrier material with a low barrier height for magnetic tunnel junctions: MgGa₂O₄ spine oxide

〇介川 裕章¹、加藤 侑志²、Belmoubarik Mohamed¹、Cheng P.-H.^1,3、大坊 忠臣²、下村 尚治²、上口 裕三²、伊藤 順一²、與田 博明²、大久保 忠勝¹、三谷 誠司^1,3、宝野 和博^1,3 (1.物材機構、2.東芝、3.筑波大)

キーワード：Magnetic tunnel junction, Spinel

A magnetic tunnel junction (MTJ) with a low resistance area product (RA) is required for memory applications such as a large capacity MRAM. Introduction of a tunnel barrier material having a low band gap is expected to be effective for reducing an RA of MTJs. In this study, we developed an epitaxial MTJs with a "MgGa₂O₄ spinel oxide" having a low band gap as a barrier layer. In addition to achieving a relatively high tunnel magnetoresistance ratio exceeding 120% at room temperature, we succeeded in reducing an RA to 1/50 compared with the conventional MgAl₂O₄ barrier .