[14p-P10-1~98] 10 Spintronics and Magnetics（Poster）

▲ [14p-P10-9] Effect of thermal annealing on hole spin relaxation of Be-doped InGaAsP bulk

〇Shima Tanigawa¹, Masayuki Iida¹, Yoshiki Nakamura¹, Canyu Jiang¹, Ko Nakayama¹, Shulong Lu², Lian Ji² (1.Waseda Univ., 2.SINANO-CAS)

Keywords:spin, InGaAsP, anneal

In this research, we investigated the effect of thermal annealing on hole spin relaxation of Be-doped InGaAsP bulk. We measured hole spin relaxation times of the annealed sample and unannealed sample by time-resolved spin-dependent pump and probe reflectance measurements. As a result, the hole spin relaxation time of annealed sample are slower than that of unannealed sample. I think this research has the important meaning that can contribute to elucidation of the spin relaxation mechanism.