[14p-P10-1~98] 10 スピントロニクス・マグネティクス（ポスター）

▲ [14p-P10-9] Effect of thermal annealing on hole spin relaxation of Be-doped InGaAsP bulk

〇谷川 詩馬¹、飯田 真之¹、中村 芳樹¹、ショウ サンウ¹、中山 航¹、Lu Shulong²、Ji Lian² (1.早大先進理工、2.中国科学院)

キーワード：spin, InGaAsP, anneal

In this research, we investigated the effect of thermal annealing on hole spin relaxation of Be-doped InGaAsP bulk. We measured hole spin relaxation times of the annealed sample and unannealed sample by time-resolved spin-dependent pump and probe reflectance measurements. As a result, the hole spin relaxation time of annealed sample are slower than that of unannealed sample. I think this research has the important meaning that can contribute to elucidation of the spin relaxation mechanism.