[14p-P3-1~19] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

△ [14p-P3-4] Development of Sapphire RIE process with suppression of surface roughness for direct bonding

〇Ryo Uchida¹, Kentaro Iwami¹, Norihiro Umeda¹ (1.Tokyo Univ. of Agri. & Tech.)

Keywords:sapphire, surface roughness, reactive ion etching