The 64th JSAP Spring Meeting, 2017

Presentation information

Poster presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[14p-P3-1~19] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Tue. Mar 14, 2017 1:30 PM - 3:30 PM P3 (BP)

1:30 PM - 3:30 PM

[14p-P3-9] A Fabri-perot interometer surface stress sensor integrated with readout circuit for biological and chemical sensor

Satoshi Maruyama1, Takeshi Hizawa1, Kazuhiro Takahashi1, Kazuaki Sawada1 (1.Toyohashi Univ.Tech.)

Keywords:MEMS

This paper reports the design, fabrication and demonstration of A Fabry-Perot sensor interferometer integrated with readout photocurrent circuits by the integrated MEMS processing technique. The fabri-perot interferometer sensor has been developed for a bio sensor application similar to [1] and [2]. The released poly-chloro-para-xylylene membrane is 350-nm thick and has a diameter of 100 µm with a 300-nm air gap. We have resently developed a CMOS-MEMS based label free sensor as reported at IEDM 2012 [2]. We used the same process to develop a MEMS Fabry-Perot interferometer sensor. We successfully detected the protein by coating the wiring with the diaphragm material Parylene-C for real time measurement of the biosensor in solution.