2017年第64回応用物理学会春季学術講演会

講演情報

一般セッション(ポスター講演)

17 ナノカーボン » 17 ナノカーボン(ポスター)

[14p-P4-1~78] 17 ナノカーボン(ポスター)

2017年3月14日(火) 13:30 〜 15:30 P4 (展示ホールB)

13:30 〜 15:30

[14p-P4-14] Fabrication and photoluminescence characterization of carbon nanotube dual-gate devices

笹部 明宏1,2、宇田 拓史1,2、吉田 匡廣2、石井 晃博1,2、加藤 雄一郎2 (1.東大院工、2.理研)

キーワード:カーボンナノチューブ、フォトルミネッセンス、電界効果デバイス

Photoluminescence from carbon nanotubes subjected to a DC gate voltage is quenched due to induced carrier accumulation [1], whereas applying a square-wave gate voltage to nanotubes causes luminescence recovery as a result of carriers being swept into contact electrodes [2]. Here we characterize photoluminescence of carbon nanotubes in dual-gate devices which allow for simultaneous and independent application of a DC gate voltage and a square-wave gate voltage. The devices are fabricated from silicon-on-insulator substrates, where trenches isolate two regions of the top silicon layer for use as the dual gates. We then perform thermal oxidation to form a gate dielectric, and air-suspended carbon nanotubes are grown over the trench between the dual gates. Photoluminescence measurements are used to identify the chirality of the as-grown individual nanotubes, and we examine the response of the nanotube emission to various combinations of the dual-gate voltages.
[1] S. Yasukochi, T. Murai, S. Moritsubo, T. Shimada, S. Chiashi, S. Maruyama, Y. K. Kato, Phys. Rev. B 84, 121409(R) (2011).
[2] M. Jiang, Y. Kumamoto, A. Ishii, M. Yoshida, T. Shimada, Y. K. Kato, Nature Commun. 6, 6335 (2015).