[14p-P4-1~78] 17 Nanocarbon Technology（Poster）

[14p-P4-25] Graphene Flakes Catalyzing Oxygen Reduction Reaction to Cause Ge Etching in Water

Kazuki Nakade¹, 〇Tomoki Hirano², Shaoxian Li², Kentaro Kawai¹, Mizuho Morita¹, Kenta Arima¹ (1.Grad. School of Eng., Osaka Univ., 2.School of Eng., Osaka Univ.)

Keywords:reduced graphene oxide, semiconductor surface, etching

Dispersed flakes of hydrazine reduced graphene oxide (HRGO) were deposited on Ge surfaces. The samples were immersed into the two kinds of water with different concentrations of dissolved O₂ molecules. The resulting surface structures were characterized by AFM. And we find that there exist many etch pits, of which sizes were equivalent to those of HRGO, on the Ge surface immersed into water with saturated O₂ molecules. This indicates that etching of a Ge surface is enhanced by HRGO flakes catalyzing the oxygen reduction reaction in water.