[14p-P4-1~78] 17 Nanocarbon Technology（Poster）

[14p-P4-46] Drift evaluation of solution gated graphene field effect transistors

〇Shota Ushiba¹, Takao Ono², Yasushi Kanai², Masahiko Kimura¹, Kazuhiko Matsumoto² (1.Murata, 2.ISIR)

Keywords:graphene, field effect transistor, nanodevice

We studied the drift phenomena in solution gated graphene field effect transistors (FETs). The gate potential (V_GS) was applied across an electrolyte solution. The drift of I_DS and the Dirac point was evaluated by measureing time course of I_DS-V_GS plots. It was found that I_DS decreased and the Dirac point shifted toward negative side over time. We also investigated the drift at different V_DS, different concentrations of electrolyte, and so on. Furthremore, we compared the dfift between the solution gated FETs and back gated FETs, and discussed the effect of the solution on the drift.