[14p-P7-1~16] 3.11 Photonic structures and phenomena

[14p-P7-8] Position dependence of silicon photonic crystal nanocavities fabricated by photolithography on 300 mm SOI wafer.

〇Kohei Ashida¹, Makoto Okano², Minoru Ohtsuka², Miyoshi Seki², Nobuyuki Yokoyama², Keiji Koshino², Koji Yamada², Yasushi Takahashi¹ (1.Osaka Pref. Univ., 2.AIST)

Keywords:photonic crystal nanocavity, photolithography, CMOS compatible process

For future industrial applications, it is important to fabricate the high-Q nanocavities using a photolithography process. We previously reported that we fabricated multi-step heterostructure nanocavities on 300 mm SOI wafer using 193 nm ArF immersion lithography and achieved a Q factor of beyond a million. Position dependence is also considerable thing to fabricate nanocavities. Thus, we report the position dependence of heterostructure nanocavities located everywhere in the 300 mm SOI wafer.