The 64th JSAP Spring Meeting, 2017

Presentation information

Poster presentation

3 Optics and Photonics » 3.11 Photonic structures and phenomena

[14p-P7-1~16] 3.11 Photonic structures and phenomena

3.11と13.7,3.11と3.12のコードシェアセッションあり

Tue. Mar 14, 2017 4:00 PM - 6:00 PM P7 (BP)

4:00 PM - 6:00 PM

[14p-P7-8] Position dependence of silicon photonic crystal nanocavities fabricated by photolithography on 300 mm SOI wafer.

Kohei Ashida1, Makoto Okano2, Minoru Ohtsuka2, Miyoshi Seki2, Nobuyuki Yokoyama2, Keiji Koshino2, Koji Yamada2, Yasushi Takahashi1 (1.Osaka Pref. Univ., 2.AIST)

Keywords:photonic crystal nanocavity, photolithography, CMOS compatible process

For future industrial applications, it is important to fabricate the high-Q nanocavities using a photolithography process. We previously reported that we fabricated multi-step heterostructure nanocavities on 300 mm SOI wafer using 193 nm ArF immersion lithography and achieved a Q factor of beyond a million. Position dependence is also considerable thing to fabricate nanocavities. Thus, we report the position dependence of heterostructure nanocavities located everywhere in the 300 mm SOI wafer.