[14p-P8-1~10] 3.13 Semiconductor optical devices

[14p-P8-3] Electrical characteristics of 1.5μm GaInAsP double-hetero laser on wafer bonded InP/Si substrate

〇Xu Han¹, Tetsuo Nishiyama¹, Naoki Kamada¹, Yuya Onuki¹, GANDHI KALLARASAN PERIYANAYAGAM¹, Kazuki Uchida¹, Masaki Aikawa¹, Hirokazu Sugiyama¹, Natsuki Hayasaka¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

Keywords:InP/Si, direct bonding, GaInAsP