[14p-P9-1~30] 8 Plasma Electronics（Poster）

[14p-P9-15] Gene Expression Profile of Yeast, S. cerevisiae, after Low-temperature Plasma Treatment

〇Yoshihito Yagyu¹, Masatsugu Motomura¹, Yoshiki Nakao¹, Nobuya Hayashi², Takashi Yamasaki¹, Takeshi Ihara¹, Tamiko Ohshima¹, Hiroharu Kawasaki¹ (1.Sasebo-kosen, 2.Kyushu Univ.)

Keywords:gene expression, atmospheric pressure plasma jet, Yeast

In this study, argon atmospheric pressure plasma jet (APPJ) as low temperature plasma was irradiated to yeast, Saccharomyces cerevisiae, and influence of plasma irradiation was analyzed by microarray method to identify gene expression of deoxyribonucleic acid (DNA) of yeast. Argon APPJ was generated by an AC high-voltage power source at 10 kVpp with 9–11 kHz (Logy Electric Co., LHV-10AC). APPJ exposed to yeast in pure water for 10 minutes, and yeast was cultured in YM liquid culture medium for 18 hours as a logarithmic growth phase, 24 hours and 50 hours after plasma irradiation. Gene expression in S. cerevisiae after plasma irradiation was measured by custom oligo DNA microarray (Yeast) commercialized by Agilent technology, and a genetic expression pattern of each experimental condition was compared in this study.