[15a-313-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[15a-313-1] Formation of nucleation layer for direct growth of InAs/GaAs quantum dots on Si (100) just substrates

〇(M2)Joohang Lee¹, Jinkwan Kwoen², Takeo Kageyama², Katsuyuki Watanabe¹, Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (1.IIS, Univ. of Tokyo, 2.NanoQuine, Univ. of Tokyo)

Keywords:Molecular Beam Epitaxy, Silicon photonics