[15a-313-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[15a-313-6] Broadband control of polarization characteristics in closely-stacked InAs/GaAs quantum dots by growth temperature and thickness of GaAs spacer layer (2)

〇Toshiyuki Kaizu^1,2, Yusuke Tajiri¹, Takashi Kita¹ (1.Grad. Sch. of Eng., Kobe Univ.., 2.CSREA, Kobe Univ.)

Keywords:quantum dot, polarization characteristics, closely stacking