[15a-315-1~10] 13.8 Compound and power electron devices and process technology

[15a-315-1] Electrical properties of AlGaN/GaN structures formed by AlGaN growth on RIE-GaN surface

〇Akio Yamamoto¹, Satoshi Yoshida¹, Keito Kanatani¹, Masaaki Kuzuhara¹ (1.Univ. of Fukui)

Keywords:AlGaN/GaN, RIE, MOCVD

A Hall mobility around 500 cm²/V is achieved for AlGaN/GaN structures prepared by the growth of AlGaN directly on RIE-treated n^--GaN. A HEMT transistor is also successfully fabricated using those structures.