Development of Vertical GaN Merged PiN Schottky (MPS) Diode

Presentation information

Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

Wed. Mar 15, 2017 9:00 AM - 11:45 AM 315 (315)

Taketomo Sato(Hokkaido Univ.)

10:30 AM - 10:45 AM

〇Tetsuro Hayashida¹, Takuma Nanjo¹, Akihiko Furukawa¹, Mikio Yamamuka¹ (1.Mitsubishi Electric)

Keywords:GaN, Schottky Barrier Diode