[15a-315-1~10] 13.8 Compound and power electron devices and process technology

△ [15a-315-7] Fabrication of Collector-top Vertical Gallium Nitride Heterojunction Bipolar Transistor with 2DHG

〇Yuto Ando¹, Masaya Ogura¹, Junya Matsushita¹, Shigeyoshi Usami¹, Atsushi Tanaka², Kentaro Nagamatsu², Maki Kushimoto¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^1,2,3,4 (1.Dept. of Electronics, Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Univ. ARC, 4.NU VBL)

Keywords:GaN, HBT, 2DHG