[15a-315-1~10] 13.8 Compound and power electron devices and process technology

[15a-315-9] Influence of thermal conductivity of transfer substrate on thermal resistance of transferred AlGaN/GaN HEMTs

〇Masanobu Hiroki¹, Kazuhide Kumakura¹ (1.NTT BRL)

Keywords:nitride semiconductor, HEMT, transfer technique

We investigated influence of thermal conductivity of transfer substrate on thermal resistance of AlGaN/GaN HEMTs using substrate transfer technique with h-BN. The thermal resistance of HEMTs linearly increased with the thermal resistivity of the substrates. We obtained the thermal resistance of HEMT of 4 mmK/W at the thermal resistivity of 0 mK/W from the linear extrapolation. It indicates that the thermal conductivity of epitaxial layers is about 50 W/m K.