[15a-416-1~10] 12.3 Functional Materials and Novel Devices

[15a-416-1] Investigation of operation mechanism in negative differential resistance transistor with organic p-n heterojunction

〇(DC)Kazuyoshi Kobashi^1,2, Ryoma Hayakawa¹, Toyohiro Chikyow¹, Yutaka Wakayama^1,2 (1.NIMS, 2.Kyushu Univ.)

Keywords:organic heterojunction, negative differential resistance

Esaki diode and resonant tunneling diode with III-V materials or two-dimensional materials have been investigated as NDR devices. These conventional NDR devices show distinct NDR at low temperature, however, room temperature operation result in poor PVRs (below 30). To solve this problem, we have proposed NDR transistor with organic p-n heterojunction and our device shows large PVR beyond 10⁴ even at room temperature. In this presentation, we will report investigation of origin of NDR in our device.