2017年第64回応用物理学会春季学術講演会

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6 薄膜・表面 » 6.3 酸化物エレクトロニクス

[15a-419-1~10] 6.3 酸化物エレクトロニクス

2017年3月15日(水) 09:00 〜 11:30 419 (419)

清水 亮太(東工大)

10:30 〜 10:45

[15a-419-7] n-Cu2O/p-CuxS Thin Film Heterostructures for Solar cells

Jayathilaka KMD Charith1,2、Kumara L.S.R.3、Song C.H.3、Kohara Shinji3、Sakata Osami3、Siripala Withana1、Jayanetti J. K. D. S.2 (1.Univ. of Kelaniya、2.Univ. of Colombo、3.NIMS/SPring-8)

キーワード:Cuprous Oxide, Sulphidation, Electrodeposition

In this study, the n-type cuprous oxide films were electrodeposited potentiostaticaly on Ti substrate in acetate bath. A Junction of Cu2O/CuxS was formed by partially sulphiding the Cu2O films using an aqueous sodium sulphide solution. Resulting Ti/Cu2O/CuxS/Au solar cell structure produced Voc = 520 mV and Jsc= 11.4 mAcm-2, under AM 1.5 illumination. The obtained cell yielded a power conversion efficiency of 3.64%, which to the best of our knowledge is the highest reported efficiency for electrodeposited Cu2O based solar cells.