[15a-422-1~12] 3.13 Semiconductor optical devices

[15a-422-9] A Study on the Photo-resistance and the Decomposition Mechanism of Perfluoro Resins Applied to Encapsulating Deep Ultra Violet LEDs

〇Yosuke Nagasawa¹, Kiho Yamada¹, Shouko Nagai¹, Akira Hirano¹, Masamichi Ipponmatsu¹, Ko Aosaki², Yoshio Honda³, Hiroshi Amano³, Isamu Akasaki⁴ (1.UV Craftory, 2.Asahi Glass, 3.Nagoya Univ., 4.Meijo Univ.)

Keywords:deep ultra-viole light emmiting diode, resin encapsulation, fluoric resin

Our group reported in the previous time that fluoric resins can be regarded as plausible materials for encapsulating AlGaN-based deep ultra-violet (DUV) light emitting diodes (emitting wavelength 250~300 nm), because a silicone resin with DUV transparency did not show enough photo-resistance to DUV lights. Also, the fluoric polymer with -CF₃ terminal showed the most DUV-resistance. In this report, we focus on degradation mechanism of the main chain structure of fluoric polymers, comparing between two fluoric polymers with different main chain structures.