[15a-501-1~10] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [15a-501-10] Simulation of an edged-illuminated refracting-facet spin photodiode

〇(DC)Roca Ronel Intal¹、Nishizawa Nozomi¹、Nishibayashi Kazuhiro¹、Munekata Hiro¹ (1.Tokyo Tech)

キーワード：Spin photonics, Semiconductor heterostructures, spin photodiode

We propose a novel edge-illuminated spin photoiode (spin-PD) design that utilizes a refracting facet. Unique points of the design involves, firstly, a thin active layer with a thickness less than the spin relaxation length, and secondly, a refracting facet that couples the light into the active layer. The simulations were carried out for a Fe/x-AlOx/p-InGaAs/p-GaAs Schottky diode with InGaAs as the active layer, although the design can be applied to any material system. For the case of a facet angle of 75 deg., an optimum active layer thickness of approximately 400nm was observed. At this active layer thickness, a helicty dependent photocurrent ratio of approximately 19% was calculated. This value is higher than the that of the current best in the literature.