[15a-503-1~12] 15.4 III-V族窒化物結晶

▼ [15a-503-1] Synthesis of hexagonal BN on sapphire substrate via pulsed-mode MOCVD growth technique

〇Yang Xu¹、Nitta Shugo²、Nagamatsu Kentaro²、Honda Yoshio²、Amano Hiroshi^2,3,4 (1.Dept. of Electrical Engineering and Computer Science, Nagoya Univ.、2.IMaSS、3.ARC、4.VBL)

キーワード：Boron Nitride, MOCVD, pulsed-mode

Growth of hexagonal BN (h-BN) on sapphire substrate by MOCVD using pulsed-mode growth technique is presented in this study.The dependence of crystal structure and surface properties of grown BN film on growth parameters, including growth temperature, ratio of nitrogen and boron (N/B) and precursor injection and interruption times, are investigated in detail. Finally, a quality improved BN layer is obtained at an optimized growth condition. Furthermore, more analysis in terms of epitaxial structure and optical properties of grown h-BN layer was carried out as well. Further discussion will be presented in the conference.