[15a-503-1~12] 15.4 III-V-group nitride crystals

△ [15a-503-12] Relationship between lattice mismatch and indium composition in InGaN thin films

〇Yuya Inatomi¹, Yoshihiro Kangawa^1,2,3, Tomonori Ito⁴, Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, 3.IMaSS, 4.Mie Univ.)

Keywords:nitride semiconductor, composition pulling effect, InGaN

Indium gallium nitride (InGaN) alloys are attracting materials for light-emitting diodes (LED) and high efficiency solar cell. In many cases, InGaN films are grown on GaN epitaxial layer. However, it is known that large lattice mismatch between InGaN/GaN inhibits indium incorporation to InGaN, which is called as “composition pulling effect”. We have theoretically investigated this effect by “thermodynamic analysis” and “empirical interatomic potential calculation”. Calculation results well explains the composition pulling effect.