The 64th JSAP Spring Meeting, 2017

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[15a-503-1~12] 15.4 III-V-group nitride crystals

Wed. Mar 15, 2017 9:00 AM - 12:15 PM 503 (503)

Tetsuya Akasaka(NTT), Yoshiki Saito(TOYODA GOSEI)

10:15 AM - 10:30 AM

△ [15a-503-6] Growth and characterization of AlGaN on annealed sputtering AlN layer

〇Junya Hakamata1, Yuta Kawase1, Sho Iwayama1, Motoaki Iwaya1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Isamu Akasaki1,2, Hideto Miyake3 (1.Meijo Univ., 2.Akasaki Research Center,Nagoya Univ., 3.Mie Univ.)

Keywords:AlGaN