The 64th JSAP Spring Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.6 Semiconductor English Session

[15a-513-1~8] 13.6 Semiconductor English Session

Wed. Mar 15, 2017 9:00 AM - 11:15 AM 513 (513)

Takashi Kunimoto(Tokushima Bunri Univ.), Masato Koyama(TOSHIBA)

9:00 AM - 9:15 AM

[15a-513-1] Modification of TiO2 single crystal surface by laser radiation

〇(DC)Dauksta Edvins1,2, Mizeikis Vygantas1, Medvids Arturs2, Shimomura Masaru1, Fukuda Yasuo1, Murakami Kenji1 (1.Shizuoka University, 2.Riga Technical University)

Keywords:laser processing, phase transition, anatase

In this study, the effects of laser radiation on TiO2 rutile single crystals were investigated by Raman spectroscopy and electron backscatter diffraction. Titanium dioxide (TiO2) is a wide band gap metal oxide semiconductor with numerous applications in science and technology. The main fields are photovoltaics and photocatalytic water purification.
EBSD mapping shows that rutile crystal surface layer is converted to anatase phase after laser irradiation. Also Raman spectroscopy after the laser treatment confirms formation of the anatase phase. We propose that laser induced localized high pressure and high temperature field is the cause of the rutile to anatase phase transition.