2017年第64回応用物理学会春季学術講演会

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13 半導体 » 13.6 Semiconductor English Session

[15a-513-1~8] 13.6 Semiconductor English Session

2017年3月15日(水) 09:00 〜 11:15 513 (513)

國本 崇(徳島文理大)、小山 正人(東芝)

09:00 〜 09:15

[15a-513-1] Modification of TiO2 single crystal surface by laser radiation

〇(DC)Edvins Dauksta1,2、Vygantas Mizeikis1、Arturs Medvids2、Masaru Shimomura1、Yasuo Fukuda1、Kenji Murakami1 (1.Shizuoka University、2.Riga Technical University)

キーワード:laser processing, phase transition, anatase

In this study, the effects of laser radiation on TiO2 rutile single crystals were investigated by Raman spectroscopy and electron backscatter diffraction. Titanium dioxide (TiO2) is a wide band gap metal oxide semiconductor with numerous applications in science and technology. The main fields are photovoltaics and photocatalytic water purification.
EBSD mapping shows that rutile crystal surface layer is converted to anatase phase after laser irradiation. Also Raman spectroscopy after the laser treatment confirms formation of the anatase phase. We propose that laser induced localized high pressure and high temperature field is the cause of the rutile to anatase phase transition.