[15a-513-1~8] 13.6 Semiconductor English Session

▼ [15a-513-3] A study on Pt/SrBi₂Ta₂O₉/HfO₂/Si MFIS diode for low voltage operation

〇(D)Zeng Binjian^1,2、Peng Qiangxiang²、Zhou Yichun²、Ohmi Shun-ichiro¹ (1.Tokyo Tech.、2.Xiangtan Univ.)

キーワード：MFIS diode, low voltage operation

Ferroelectric gate field effect transistor memory (FeFET) is one of the most promising emerging non-volatile memories due to its low power consumption, and fast read/write speed. The FeFET with Pt/SrBi₂Ta₂O₉ (SBT)/HfO₂/Si gate stack has been attracting much attention so far for its long retention and high endurance. Although the device with 190-nm-thick Sr_1−xCa_xBi₂Ta₂O₉ (SCBT) and 85-nm-thick SBT were reported, the further study of device with good properties is required for lower voltage and higher density application. In this study, the Pt/SBT/HfO₂/p-Si(100) diode with thin SBT film and HfO₂ was fabricated and characterized.