[15a-513-1~8] 13.6 Semiconductor English Session

▲ [15a-513-6] Amplified Spontaneous Emission from GeSn/Ge heterostructures

〇(M1C)Bo-Jun Huang¹, Guo-En Chang¹ (1.Nat. Chung Cheng Univ.)

Keywords:Amplified Spontaneous Emission, GeSn alloys, cavity

GeSn alloys have been emerging as a new material system for efficient Si-based light emitters. Adding Sn into Ge can effectively transfer the band structure from indirect to direct, making population inversion possible to achieve optical gain. Enhanced photoluminescence (PL), electroluminescence (EL) have been observed, and lasing action from GeSn Fabry-Perot cavities have been recently achieved. However, the luminescence properties of GeSn have not been fully understood. In this paper, we present preliminary results on amplified spontaneous emission (ASE) from GeSn/Ge heterostructures.