[15a-F202-1~13] 3.12 Nanoscale optical science and near-field optics

[15a-F202-11] Wavenumber Excitation of a Silicon Semiconductor by an Optical Near-Field

〇Masashi Noda¹, Maiku Yamaguchi², Katsuyuki Nobusada¹ (1.IMS, 2.Univ. Tokyo)

Keywords:optical near-field excitation, silicon semiconductor, electron dynamics

We verified optical near-field excitation of a silicon semiconductor by electron dynamics based on first principles calculation. Our estimation for transition probability under the optical near-field shows that transition between different wavenumbers is likely to occur, and an optical absorption curve between different wavenumbers rises from about 1.6 eV in the electron dynamics calculations for optical near-field excitation. This absorption is an order of magnitude larger than conventional far-field absorption. Our findings play an important role in developing optical functionality of silicon.