[15a-F202-1~13] 3.12 Nanoscale optical science and near-field optics

△ [15a-F202-8] The study on the principle of light emission of Si LED using dressed-photon-phonon

〇(P)JunHyoung Kim¹, Tadashi Kawazoe², Motoichi Ohtsu¹ (1.Univ. of Tokyo, 2.NPEO)

Keywords:dressed photon, Si, light emission

With focusing on Dressed-Photon-Phonon, The light-emission efficiency of indirect bandgap semiconductor can be improved several orders of magnitude. Based on this fact, the Si-based technology is about to enter a new era. This light-emission phenomena can be explained with 2-level quantum model, and now it is clear that this phenomena caused by the optimization of dopants-placement in the microscopic region, still there are many things should be clarified. In this research, I am going to explain the advanced study on this topic.