[15a-F204-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-F204-6] Thermodynamics of Al and N in 4H-SiC for Doping Control during Solution Growth of SiC

〇Sakiko Kawanishi¹, Hiroyuki Shibata¹, Takeshi Yoshikawa² (1.Tohoku Univ., 2.Univ. Tokyo)

Keywords:silicon carbide, solution growth, doping

Doping control during solution growth of 4H-SiC is a great issue. Therefore, thermodynamic evaluation was carried out to estimate Al and N contents in 4H-SiC. The estimated Al and N contents in 4H-SiC agreed well with the reported values. It was found that Al and N contents in 4H-SiC grown at various P_N2, solvent composition and temperature can be estimated thermodynamically.