[15a-P5-1~9] 6.4 Thin films and New materials

[15a-P5-4] Polarized luminescence property of non-polar ZnO thin films deposited by a catalytic reaction-assisted CVD method

〇Kanji Yasui¹, Ryouichi Tajima¹, Munenori Ikeda¹, Yudai Adachi¹, Ariyuki Kato¹ (1.Nagaoka Univ. Technol.)

Keywords:ZnO, catalytic reaction, polarization emission

ZnO films are usually grown on c-plane sapphire substrates, which results in the films having a <0001> orientation. These films will be used in optoelectronic devices such as light-emitting diodes and laser diodes operating in the ultraviolet region. However, in such <0001> oriented ZnO films, a macroscopic electrostatic field is generated along the growth direction. The induced electric field can have a negative effect on device properties, such as causing a decrease in the overlap between electron and hole wave functions in quantum wells, which leads to a reduction in the internal quantum efficiency of emitting devices. In order to eliminate such polarization effects, growth of non-polar ZnO films is required. In this study, non-polar ZnO films were grown on r-plane sapphire substrates using a reaction catalytic reaction-assisted chemical vapor deposition. The photoluminescence results indicated anisotropy in the polarization between the directions parallel and perpendicular to the c-axis.