[15a-P6-1~13] 6.5 Surface Physics, Vacuum

△ [15a-P6-11] The measurement of GaN crystal surfaces with the X-ray crystal truncation rod scattering

〇Yuka Umino¹, Kayoko Ando¹, Azumi Noguchi¹, Yuri Kitajima¹, Saki Amagai¹, Haruka Miyashita¹, Koichi Akimoto¹ (1.Japan Women's Univ.)

Keywords:GaN, CTR

Gallium Nitride (GaN) has attracted much attention owing to its application in a wide range of electronic devices for energy saving society. However, GaN crystals need to upgrade the quality of films grown on them. Therefore, knowledge of the structures is importance for understanding the fundamental issues of growth processes.
We observed the as-received MOCVD sample and the as-received HVPE sample. In this publication, we report results of GaN c-planes observed by the X-ray crystal truncation rod scattering.